在深次微米的技术下,由于有较小的元件形状(device geometry),较大的晶元尺寸 (die size),较快的上升时间(rise time),较高的操作频率(operating frequency)和较低的操
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The geometric factor of sensitivity related to device geometry resulting from short-circuit-effect of power supply electrodes and out-put electrodes can be obtained.
得到了电源电极短路效应和输出电极短路效应引起的灵敏度几何因子与器件尺寸的关系。
The enhancement is achieved is by using a continuous geometry for the two frustroconical sections of the double-cone device.
这种增强效果是通过使用用于该双圆锥设备的两个截头 圆锥部分的一个连续几何构形而获得的。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
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