... 空乏区 depletion region 空乏区宽度 depletion width 空乏型场效晶体管 depletion-mode field-effect transistor ...
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A formula of depletion layer width is also deduced.
也导出了两方法的耗尽层宽度公式。
In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.
本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。
Under the approximation of the full depletion, the calculating formulas for the width and electrical field of depletion region are obtained.
提出了热及电场诱导的多载流子模型，在完全耗尽近似下，得出了耗尽区厚度和电场强度的计算公式。
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