A thermal treatment step is next performed so as to recrystallize the amorphized region of the defective semiconductor crystal material.
然后执行热处理步骤，以便使有缺陷的半导体晶体材料的非晶化区域再结晶。
A method in which a defective semiconductor crystal material is subjected to an amorphization step followed by a thermal treatment step is provided.
提供了一种方法，其中，对有缺陷的半导体晶体材料执行非晶化步骤，随之以热处理步骤。
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