The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
Some important parameters such as defect concentration induced by electron irradiation are calculated.
文中还计算了电子辐照在硅中所产生的缺陷浓度等一些重要参数。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).
利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态。
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