Some important parameters such as defect concentration induced by electron irradiation are calculated.
文中还计算了电子辐照在硅中所产生的缺陷浓度等一些重要参数。
The production kinetics of thermal defects is discussed. The formula for thermal defect concentration has been derived.
本文讨论了热缺陷的产生动力学过程，给出了热缺陷浓度的公式。
On the other hand, ionic diffusion may cause deviation of defect concentration from its stoichiometric equilibrium value.
另一方面，离子扩散可能导致缺陷浓度在平衡位置的偏离。
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