Defect Band Structure 缺陷带结构
H plasma treating can saturate the dangling bonds, reduce the defect density, leads the defect band reduced. Therefore weak the supply function, lower the field emission properties.
H等离子体处理饱和了薄膜表面的悬挂键,使禁带中的缺陷能级(带)减少,电子占据态密度变少,减少了电子源的供给,使样品的场发射性能降低。
参考来源 - 铝镓氮半导体薄膜制备及场发射性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
应用推荐