...子元器件为电阻 (R-resistor) 电容 , (C-capacitor) (电容又包括陶瓷电容—C/C ,钽电容—T/C,电解电容—E/C), 二极管 ( D-diode ), 稳压 二极管 (ZD),三极管(Q-transistor),压敏电阻(VR),电感线圈(L),变压 器(T),送话器(MIC),受话器(RX),集成电路(IC),喇叭(SP...
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alloyed d diode 合金型二极管
ILD D Injection laser diode 注入式激光二极管
VCD D Variable Capacitance Diode 变容二极管
diffused d type diode 扩散型二极管
forward d biased diode 正向偏压二极管
diffused d silicon diode 扩散型硅二极管
Sample the negative voltage on the diode series with IGBT by Peak hold switch circuit, and cut-in A/D module in the DSP, compared with setting value.
通过电压峰值采样保持电路对IGBT串联二极管反压值进行采样，后经DSP A/D转换模块与反压设定值进行比较。
Practice shows that pressure sensitive resistance as a protective element of rectifier for D. C. supply is preferable to diode.
实践表明，压敏电阻作直流电源的整流器的保护元件优于二极管。
A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider.
提出了一种基于共振隧穿二极管的新型边沿触发d触发器并将之用于构成二进制分频器。
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