The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
CZ series chemical process pumps are designed by combining foreign advanced technology. Their structure forms are horizontal and suspended frame, radial cutting, back gate, single-stage.
CZ型离心化工泵是引进国外先进技术制造，结构形式为卧式悬架、径向剖分、后开门。
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