This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

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The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.

用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。

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Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).

多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。

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