Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?

在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？

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Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.

最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。

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