Automatic diameter control (ADC) is a key technique for the CZ crystal growth equipment.
自动直径控制(adc)技术是直拉法晶体生长设备的一项关键技术。
The single crystal furnace is a special equipment of growth single crystal for LSI. This paper mainly introduces the design of vacuum system and charge system of crystal furnace.
单晶炉是生长大规模集成电路所需要硅单晶的专用设备。本文主要介绍了单晶炉的真空系统与充气系统的设计。
The equipment adopts the technology of directional solidification, producing polycrystalline silicon ingots through melting and directional crystal growth in a period of approximate 60 hours.
该设备应用定向固化技术，经融化、定向晶体生长，通过60小时左右铸成多晶硅铸锭。
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