In this research, the author got the relationships of Critical dimension of poplar dying, the length of wood, equivalent diameter, drying temperature, pressure and so on.
研究表明:杨木真空干燥临界尺寸的大小与木材的长度、当量直径、干燥温度、环境压力等因素有关。
参考来源 - 杨木真空过热蒸汽干燥规律的研究Semiconductor critical dimension getting shortens as the IC manufacture rapid development and advanced microlithography technical, but the critical dimension requires a better overlay.
随着IC制造业的迅速发展,光刻成像技术的不断提高,芯片的特征尺寸也不断的缩小,而关键尺寸的缩小则产生了对套刻精度更高的要求。
参考来源 - Canon KrF扫描光刻机套准精度的改进方法研究·2,447,543篇论文数据,部分数据来源于NoteExpress
以上来源于: WordNet
Critical Dimension Correction.
临界尺寸改正。
A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided.
一种在半导体与罩幕制造中改善晶圆上的图案化特征结构的临界尺寸均匀性的方法。
Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
均匀的蚀刻允许通过简单的各向同性蚀刻来减小电活性构件的临界尺寸的有效方法。
应用推荐