Increasing workfunction of control gate decreases the devices’s programming speed, increases the erasing speed and doesn’t affect retention.
增大控制栅功函数会减小器件的编程速度,会提高器件的擦除速度,不影响器件的数据保持能力。
参考来源 - 金属纳米晶非挥发存储器存储特性的模拟Besides, when the gate length is fixed, with the ratio of the“control gate”length to the“screen gate”length increasing, the minimum surface potential has been decreasing.
此外,靠近漏端的金属的屏蔽作用增强,短沟道效应得到较大的改善;固定栅长下,控制栅和屏蔽栅的比例增大,最小表面势值减小。
参考来源 - 纳米SOI MOSFET的结构设计和性能分析·2,447,543篇论文数据，部分数据来源于NoteExpress
The floating gate can only be accessed though another transistor, the control gate.
浮动门虽然只能进入另一个晶体管，控制闸门。
A control gate having a thin gate oxide film is formed over a center channel portion of the channel region.
在沟道区的中央沟道部分上形成具有薄的栅氧化物膜的控制栅。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
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