The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.

半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。

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Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.

且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积。

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Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.

肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。

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