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Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体(CMOS)装置及其制造方法。
Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.
在传统互补式金氧半薄膜电晶体的应用上,双极性传输是一基本且重要的特性。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
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