... 基极偏置电压 base bias voltage 集电极基极结 collector base junction 集电极基极电容 collector base capacitance; collector capacitance ...
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collector-base-junction integrated diode 集电极基极结集成二极管
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.
模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显著提高光学带宽。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
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