Polishing pad is a very important component of the chemical-mechanical polishing (CMP) system.

抛光垫是化学机械抛光(CMP)系统的重要组成部分。

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Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.

半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。

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Carried through kinematic analysis for napping the CMP process of ring polishing machine, and presented pace vector and track equation about one point relative to examination piece on polishing pad.

对修正环形抛光机CMP过程进行运动分析，给出研磨盘上一点相对于工件的速度矢量与轨迹方程。

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