The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.

铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。

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Chemical mechanical planarization (CMP) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography.

化学机械抛光(CMP)在半导体工业内获得了广泛的赞同，对控制形貌起伏的硅片表面当作首选方法。

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At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.

目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。

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Why? Bundle of properties: mechanical strength, chemical inertness, ease of fabrication: that's not a unique solution.

为什么，属性的总和：,机械强度，化学惰性，易于制造，那不是独特的解决方法。

麻省理工公开课 - 固态化学导论课程节选

This is visualizing the process of the conversion of mechanical energy into chemical and electrical energy very nicely.

这一模拟恰到好处地演示了,机械能到化学能和电能的转换过程。

斯坦福公开课 - 7个颠覆你思想的演讲课程节选

I mentioned previously that we do not know a lot about how the mechanical stimulation is being converted into chemical and electrical energy.

先前我曾说过,对于机械刺激到化学和电能的转换,我们还知之甚少。

斯坦福公开课 - 7个颠覆你思想的演讲课程节选

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