...统的二氧化铪还低了三个数量级，此外，应力下所导致的 漏电流 ( stress-induced leakage current )以及电荷捕捉(charge trapping)的问题都可以借由此氟离子布值法来使得此二氧化铪闸极介电层有更好的特性。
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...te)流动而形成基极电流,而带有能量超过Si/SiO2 障碍高度 ( Barrier Height )的电子会注入氧化层中形成电荷陷入(Charge Trapping)或接口 3.
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Charge Trapping Memory 电荷俘获型存储器 ; 电荷俘获存储器
charge trapping effect 电荷俘获效应
Charge-trapping semiconductor memory device 发明名称
charge-carrier trapping 载流子捕获
trapping charge 陷阱电荷
The charge trapping structure is disposed between the gate and the fin structure.
电荷陷入结构设置于栅极与鳍状结构之间。
An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.
一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。
A first band gap between the first blocking layer and the charge trapping layer is larger than a second band gap between the second blocking layer and the charge trapping layer.
第一阻挡层和电荷俘获层之间的第一带隙大于第二阻挡层和电荷俘获层之间的第二带隙。
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