The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.

增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。

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In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.

模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。

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We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.

在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。

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