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Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
采用LDD结构:3。在允许的范围内,适当增加器件的沟道长度。
In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
Emitter performance depends on its own characteristics which include channel form, channel section area, channel section form and channel length.
灌水器的性能取决于灌水器本身的结构参数,主要包括流道形式、流道断面面积、流道断面形式及流道长度。
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