... channel division: 信道划分 channel doping: 沟道掺杂 channel identifier: 信道标识符,信道识别符 ...
基于174个网页-相关网页
FD-SOI不再需要经由掺杂进行VT调整，因为FD-SOI不需要隧道掺杂（channel doping），因此FD-SOI在变异性等问题上具有优势。它的晶圆制造工具组也与Bulk的一样。
基于16个网页-相关网页
To reduce the short-channel effects, the measures like increasing channel doping concentration and reducing gate-oxide thickness is proposed.
在小尺寸MOSFET中，为了减小短沟道效应，采取了增加沟道掺杂和减小栅氧化层厚度等措施。
参考来源 - 纳米MOSFET量子效应模型与寄生电阻分析We determine the maximum channel doping concentration by analyzing the change of the doping concentration in the channel zone on the breakdown characteristics of the device.
3、分析器件模型在沟道区掺杂浓度对器件击穿特性的影响,并确定了最大沟道掺杂浓度。
参考来源 - CCD图像传感器像元建模与仿真·2,447,543篇论文数据，部分数据来源于NoteExpress
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.
分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。
应用推荐