CF4 plasma treatment CF4等离子体处理
The products of CF4 decomposition are analysed.
对CF 4分解的产物进行了分析。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The highest DRE of CF4 is up to 99%. The DRE is increased with the increase of microwave power, and is decreased with the increase of gas flow rate.
CF 4气体的最高分解率可达99%以上，分解率随微波功率的提高而增加，随气体流速的增加而减小。
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