The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied.
本文研究了半导体表面空间电荷区中的深能级中心的电场增强载流子产生效应；
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
应用推荐