Neutron lifetime is inversely related to capture cross section.
中子寿命与俘获截面是倒数关系。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
Prolonged exposure not only increased new recombination center but also changed the capture cross section of original recombination centers.
延长曝光不仅增加新的复合中心，还改变原有复合中心的俘获截面。
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