架构介绍： (1) 覆盖层(Cap Layer)：通常GaAs 覆盖层是Si 的重掺杂约10 18 cm -3 ， 能在HEMT 中提供好的欧姆接触。
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hyaline cap layer 透明层
cap layer thickness 帽层厚度
Nonmagnetic metal cap layer 非磁金属覆盖层
cap p layer 保护层
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The influence of the thickness and concentration of the cap layer, as well as the component of the substrate, on the surface states is also obvious.
包覆层的厚度和掺杂浓度，以及基底的成分都能显著地影响表面电子态。
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Lastly, it needs to be covered with a layer of non-porous, non-cracked rock to provide a leakproof cap.
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