This paper studies the method of auto balancing bridge to precisely measure inductance L, capacitance C, resistance R(namely LCR)by measuring the high and low terminal vector voltages.
本文研究了利用自动平衡电桥方法，通过测量高端和低端两路矢量电压来精确测量电感L、电容C和电阻R（即LCR）。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
在中子辐照环境下，变容二极管c—V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
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