结合紫外可见(ultra violet-visible,UV-Vis)吸收光谱、荧光光谱和导电原子力显微镜(conductive atomic force microscopy,C-AFM)对化合物A和化合物B薄膜的光学性质以及微区电子传输行为进行了研究.
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The BCF model about smooth interface growth kinetics and the C V model about impurity stopping step have been collided with the AFM study results.
观察和研究的结果表明：关于光滑界面生长动力学的BCF模型、关于杂质对台阶生长阻碍作用的C V模型等已受到冲击与挑战；
The breakdown voltage, permittivity, crystal structure, composition, surface and refractive index of the thin films were studied by I-V, C-V, XRD, EDS, AFM and elliptical polarization instrument.
X射线衍射仪、电子能谱仪、原子力显微镜和椭圆偏振仪等研究薄膜的击穿电压、介电常数、晶体结构、化学成分、表面形貌及薄膜的折射率。
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