The bulk capacity and relatively smaller ROW is the priority of UHV, while the EM environment caused by the higher voltage was also the focus of the society.

特高压电网在提高输电能力、减小输电线路走廊的同时，也因其高电压所带来的电磁环境问题而引起社会的关注。

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The fundamental principles of the bulk-driven MOSFET, along with the frequency and noise characteristics, are discussed. The analysis and simulation of its low voltage characteristics are also made.

讨论分析了衬底驱动MOSFET的工作原理、频率特性和噪声特性，并对其低压特性进行了分析和仿真。

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On the basis of this, a method of using twice sweep under different voltage sweep rates for determining both bulk generation lifetime and surface generation velocity is proposed.

在此基础上，建议了一种通过两次不同电压扫描率的线性电压扫描来测定半导体的体产生寿命和表面产生速度的方法。

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