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An analysis for the growth process of PbI2 single crystal by bridgman method has been made.
本文分析了用布里奇曼法生长碘化铅单晶体的结晶过程。
Transient numerical simulation for Bridgman method was carried out by means of deforming finite element method .
采用变形有限元法对坩埚下降法晶体生长过程进行了瞬态数值模拟。
Compared with Czochralski method SGG single crystal growth with crucible capsuled vertical Bridgman method can improve crystal production and lower the cost efficiently.
与提拉法相比，采用坩埚密封的下降法生长sgg单晶，可以显著提高晶体产率，降低成本。
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