During the test for dynamic breakdown characteristics, we found that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase.
在动态击穿特性测试中，我们发现，GaAs MESFET的击穿电压随栅极与漏极上所加脉冲电压宽度的增大而增大。
参考来源 - GaAs MESFET击穿特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The off-state breakdown characteristics of these devices are presented.
对这些器件的关态击穿特性进行了研究。
A method to improve the secondary breakdown characteristics of transistors is introduced in the paper, and theoretical discussion is also given.
本文介绍了一种提高晶体管二次击穿耐量的方法，并从理论上作了探讨。
Then, the breakdown characteristics and the de-pendence of discharge current density on time are theoretically calculated in this kind of AC silent discharge.
然后由其解析解计算这种无声放电的着火特性和放电电流密度对时间的依赖关系，并与实验结果相比较。
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