The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
实验结果表明：多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The results show that the films with dense and amorphous structure and lower grain boundary resistance were deposited at room temperature.
研究结果表明，室温下沉积的薄膜为颗粒致密的非晶相结构，晶界电阻较小。
Conductivity varies with grain size of GDC films due to the grain boundary space charge effect, the smaller the grain size, the higher the conductivity and vice versa.
晶界空间电荷效应导致GD C薄膜电导率随晶粒尺寸而变化，晶粒尺寸越小，电导率越大。
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