Bismuth layer-structured ferroelectrics (BLSFs) have been extensively studied concerning both their fundamental properties and their device applications in nonvolatile ferroelectric random access memory(NvFRAMS).
Bi系层状钙钛矿氧化物材料以其优良的铁电性能受到广泛的关注,被认为是最有可能应用到商用铁电存储器的材料。
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