This paper has designed a inverter power supply of volume 2KVA,working frequency 20KHZ. ,based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT(绝缘栅双极晶体管)特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
参考来源 - IGBT高频逆变电源主控电路的设计The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管,包括:各种二极管、双极性三极管、场效应管等。
参考来源 - 基于虚拟仪器的晶体管特性测试仪的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
On a basic bipolar transistor, with ports for electrical input and output, the law applies straightforwardly.
在一般的双极晶体管，带有电输入和输出端口，这定律完全适用。
The circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.
该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
应用推荐