At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.
目前射频芯片和高速光纤通信芯片绝大多数都是采用高速双极性硅工艺和砷化镓工艺。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
A power amplification of H-bridge bipolar PWM control is designed for controlling DC micro-motor of positive rotation, reverse rotation and speed regulation.
基于H型双极模式P WM控制原理，设计了一种直流微电机正反转调速功率放大电路。
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