The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容，可用于制造高性能的互补双极电路。
On the bipolar-pulse mode HIPIB apparatus, a planar diode model of self-magnetic field MID is proposed for analysis of the diode behaviour during the negative pulse stage.
通过建立平面离子二极管模型，分析了负脉冲阶段二极管中初始等离子体的形成。
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