The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
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