insulated gate bipolar transistor 绝缘栅双极型晶体管 ; 晶体管
Isolated Gate Bipolar Transistor 晶体管 ; 绝缘门极双极型晶体管 ; 绝缘栅双极型晶体管 ; 极双极型晶体管
Iusulated Gate Bipolar Transistor 极晶体管 ; 绝缘栅双极晶体管
bipolar insulated gate fet ic 双极 ; 绝缘栅场效应晶体管集成电路
bipolar logic gate 双极型逻辑闸
IGBT-Insulated Gate Bipolar Transistor 绝缘栅双极型功率管 ; 晶体管
Insulated Gate Bipolar Tramistor 绝缘栅双极晶体管 ; 晶体管 ; 绝缘栅双极
Lateral Insulated-gate Bipolar Transistor 横向绝缘栅双极晶体管
The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
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