The electron beam lithography and its improvement are introduced also.
同时还介绍了电子束光刻技术及其改进。
The proximity effect in the E-beam lithography system was verified by experiments.
利用电子束曝光机完成有关邻近效应的实验。
Electron - beam lithography with a novel multilevel resist structure defines the pattern.
采用新型的多层抗蚀剂结构的电子束光刻来形成图形。
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