The transistor is about 1, 000 times smaller in area than silicon-based transistors used in electronics today, Levy says.
利维表示，利用该技术制作的晶体管比目前使用的硅晶体管小1000倍。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
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