The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.

在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。

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This flexing generates a negative potential at the feedback tab, which feeds back to the base of the transistor.

这个弯曲在反应标记上产生负电压，其反过来为晶体管的基极供电。

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Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.

无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。

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Hold the transistor by the legs with the tab facing you, the pinout for the transistor is: C, B, E or Collector, Base, Emitter.

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The paper thus acted as the dielectric between the components of each transistor, as well as being the substrate for the circuit, in the same way that the base of a silicon chip acts both as substrate and as dielectric.

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The transistor itself is composed of a single phosphorous-31 isotope, which has been precisely placed on a base of silicon using a Scanning Tunneling Microscope in an ultra-high vacuum chamber.

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