... inverted base bipolar transistor 倒置基极双极晶体管 base of transistor 晶体管座 inversion base bipolar transistor 反型基区双极晶体管 ...
基于139个网页-相关网页
base-conductivity modulation of bipolar transistor 双极晶体管基区电导率调制
This flexing generates a negative potential at the feedback tab, which feeds back to the base of the transistor.
这个弯曲在反应标记上产生负电压,其反过来为晶体管的基极供电。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管,三极管内部均有三个区、即发射区、基区、集电区,三个区形成两个PN结。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比,FFJ的有效发射极面积对基极面积之比值提高2~3倍,输出功率-阻抗乘积提高5~10倍。
应用推荐