It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.

发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。

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Compared with the K-P method, it is found that the results of two methods are accordance with the increase of the barrier width.

此法比k - P方法简便易行，而且随着势垒宽度的增加，两种方法所得结果趋于一致。

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The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.

对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。

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