The aging mechanisms were investigated by using atomic defect barrier model.
还利用原子缺陷势垒模型对几种老化现象进行了理论分析。
Finally, the characteristics of grain boundary electron barrier were described properly with superimposed barrier model.
最后,本文采用叠加势垒模型对晶界电子势垒的特性进行了很好的描述。
We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistors tunneling barrier model.
通过分析钌基厚膜应变电阻的隧道势垒模型,提出力敏模型。
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