Experimential results show that the barrier height of bonded InP/GaAs hetero-junction is close to the theoretic value. By employing superlattice structures in InP-based materials and higher bonding temperatures, electrical performances of bonding samples can be improved.
实验结果表明,键合n型InP/GaAs异质结的势垒高度接近于理论值,通过在键合界面的InP材料中引入超晶格结构以及采用高退火温度的键合方法有利于改善异质结的电学性能。
参考来源 - 1310nm垂直腔面发射激光器设计与研制·2,447,543篇论文数据,部分数据来源于NoteExpress
Vary temperature, barrier height, and potential energies.
不同的温度、势垒高度和潜能。
The relationship between transmission coefficient and effective barrier height increasing is also discussed.
文中讨论了透射系数与有效势垒高度提高的关系。
On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触,其势垒高度约为0.7V。
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