(3) MgxZn1一xO/ZnO异质构造中的能带偏移(Band offset)是一小我们普遍存眷的成绩，其对开辟和设计各类光电功效器件和新型自旋电子学器件有主要的意义。
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...；异质结；x射线光电子能谱；能阶 [gap=772]keywords：znmgo; heterostructure; x-ray photoelectron spectroscopy; band offset ...
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Finally, we discuss the electronic properties of BaTiO_3-ZnO heterostructure from its interfacial atomic structures. Band offset calculations show that electrons in ZnO atomic layers will be prevented from transmitting to BaTiO_3 side, providing possibilities for manufacturing ferroelectric-semiconductor heterostructure-based devices.
最后，从界面原子结构出发深入讨论了BaTiO_3-ZnO异质结构的电子特性，其中带偏计算表明电子从ZnO一侧难以越过界面势垒到达BaTiO_3侧，从而为研制基于铁电-半导体异质结构的纳米器件提供了可能。
参考来源 - 第一性原理研究BaTiOAs for the theoretical analysis and calculation, we use both the classical analytical Anderson model and novel numerical C-V Matching method to analyze the band structure of the nc-Si:H/c-Si, and successfully obtain the band offset and interface charge density parameters.
理论分析和计算方面,文本重点介绍了利用电容—电压谱测量PN结物理特性的经典方法和新颖的C-V Matching数值回归分析方法基本理论,并利用这两种方法对nc-Si:H/c-Si异质结二极管的电容—电压谱和能带结构进行了详细的计算和分析,得到了明确的能带断裂参数和界面电荷密度的数值。
参考来源 - 氢化纳米硅/单晶硅异质结二极管的能带结构和输运特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
The band offset directly affect the calculation results of the quantum well band structure. if the calculation of band offset does not accurate, we should not get right band edges.
在量子阱能带结构计算当中，带边不连续能量直接影响计算的结果，如果带边不连续能量计算不精确，就不能得到正确的能级位置。
For example, mango trees that were planted in India to offset a concert tour by the band Coldplay were found to have died a few years later.
比如，因Coldplay酷玩乐队的一次巡回演出而在印度种植的芒果树在几年后被发现死亡。
A deep negative feedback operation amplifier used in band gap reference is a common source and gate folded cascade operation amplifier with a lower offset voltage and a higher gain.
该带隙电压基准源电路中的深度负反馈运算放大器为低失调、高增益的折叠型共源共栅运算放大器。
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