abstract:Ballistic deflection transistors (BDT) are electronic devices being developed for very high-speed integrated circuits. Instead of switching the flow of several electrons using gates, as it is done in field-effect transistors, they manipulate the course of single electrons using electromagnetic forces.
The heterojunctionbarriercontrolledballisticelectrontransistor-a novel threeterminalsemiconductor device which could be operated competently atmillimeterwavelength frequency is proposed.