The distribution of rare earth ions embedded into porous silicon films was observed by Rutherford backscattering spectrometry.
用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况。
Rutherford backscattering spectrometry (RBS) demonstrates that the concentration of Fe or N atoms varies gradually from the substrate to the surface through the whole thickness of the films.
卢瑟福背散射分析结果表明，铁、氮两种原子的密度沿膜厚度方向呈梯度变化。
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