avalanche multiplication effect 雪崩倍增
avalanche multiplication factor 雪崩倍增系数
avalanche multiplication effect in semiconductors 半导体中的雪崩倍增效应
Avalanche multiplication breakdown has taken place when the diode is reverse-biased to 1.4kV.
器件在反向偏置达到1.4kV时出现击穿,证明了击穿由雪崩倍增导致。
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The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
The tiny size also means that multiplication noise is suppressed by 50% - 70% with respect to conventional avalanche photodetectors.
这种微小的型号也意味着，与常规的雪崩光电探测器相比倍增的噪声减弱了50%至70%。
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