avalanche injection diode 雪崩注入式二极管 ; [电子] 雪崩注入二极管
avalanche injection laser 雪崩注入式激光器
avalanche injection model 雪崩注入模型
avalanche injection type memory 雪崩注入存储器
avalanche injection stacked gate mos 雪崩注入多层栅金属氧化物半导体
floating gate avalanche injection mos 浮栅雪崩注入型金属氧化物半导体
floating gate avalanche injection memory 浮栅雪崩注入存储器
floating gate avalanche injection MOSFET 浮栅雪崩注入MOS场效晶体管
stacked-gate avalanche injection type MOS 叠栅雪崩注入金属氧化物半导体
It is indicated that two kinds of electron traps, which have different properties, were generatedin the Si/PECVD SiOxNy interface during avalanche injection. The positions in forbidden band andquantitative densities relationship of these two electron traps are provided.
指出了雪崩注入过程中在SiOxNy界面上产生两种性质不同的电子陷阱,并给出它们在禁带中的位置与密度大小关系。
参考来源 - PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究·2,447,543篇论文数据，部分数据来源于NoteExpress
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