It is indicated that two kinds of electron traps, which have different properties, were generatedin the Si/PECVD SiOxNy interface during avalanche injection. The positions in forbidden band andquantitative densities relationship of these two electron traps are provided.
指出了雪崩注入过程中在SiOxNy界面上产生两种性质不同的电子陷阱,并给出它们在禁带中的位置与密度大小关系。
参考来源 - PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究·2,447,543篇论文数据，部分数据来源于NoteExpress
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